| Description: |
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
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| Features: |
• 75A, 55V• Simulation Models- Temperature Compensated PSPICE® and SABER© Models- SPICE and SABER Thermal Impedance Models Available on the WEB at: www.Intersil.com/families/models.htm• Peak Current vs Pulse Width Curve• UIS Rating Curve• Related Literature- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
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| (Absolute) Maximum Ratings: |
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UNITS |
| Drain to Source Voltage (Note 1) |
VDSS |
55 |
V |
| Drain to Gate Voltage (RGS = 20kΩ) (Note 1) |
VDGR |
55 |
V |
| Gate to Source Voltage |
VGS |
±20 |
V |
| Drain Current Continuous (Figure 2). |
ID |
75 |
A |
| Drain Current Pulsed Drain Current |
IDM |
Figure 4 |
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| Pulsed Avalanche Rating |
EAS |
Figures 6, 14, 15 |
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| Power Dissipation |
PD |
200 |
W |
| Derate Above 25℃ |
|
1.35 |
W/℃ |
| Operating and Storage Temperature |
TJ，TSTG |
-55 to 175 |
℃ |
| Maximum Temperature for Soldering |
Leads at 0.063in (1.6mm) from Case for 10s. |
TL |
300 |
℃ |
| Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |
℃ | CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25℃ to 150℃.
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